ELECTRICAL-RESISTANCE OF IODINE-DOPED C(60) UNDER HIGH-PRESSURE

被引：13

作者：

AKAHAMA, Y ^{[1
]}

KOBAYASHI, M ^{[1
]}

KAWAMURA, H ^{[1
]}

SHINOHARA, H ^{[1
]}

SATO, H ^{[1
]}

SAITO, Y ^{[1
]}

机构：

[1] MIE UNIV,FAC ENGN,TSU,MIE 514,JAPAN

来源：

SOLID STATE COMMUNICATIONS | 1992年 / 82卷 / 08期

关键词：

D O I：

10.1016/0038-1098(92)90109-M

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

The resistance of an iodine-doped C60 complex is measured under high pressure up to 36 GPa. It decreses with pressure up to 27 GPa, where it shows a shallow minimum. Above 27 GPa, the resistance increases slightly with pressure. The electrical band gap at 17 GPa is of 0.3 eV, which is close to that of the solid C60 at almost the same pressure.

引用

页码：605 / 607

页数：3

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