ION MASS EFFECTS ON THE PLASMA-ETCHING CHARACTERISTICS OF SI AND SIO2

被引：1

|

作者：

COOKE, MJ ^{[1
]}

PELLETIER, J ^{[1
]}

机构：

[1] UNIV FOURIER,PHYS MILIEUX IONISES LAB,CNRS,UA 844,CNET GRENOBLE,F-38243 MEYLAN,FRANCE

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1989年 / 136卷 / 06期

关键词：

D O I：

10.1149/1.2097027

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

收藏

页码：1824 / 1826

页数：3

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