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- [2] CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN ZINC SULFIDE RADIO ENGINEERING AND ELECTRONIC PHYSICS-USSR, 1968, 13 (06): : 924 - &
- [3] INVESTIGATION OF INTERACTION OF IMPURITIES IN SILICON BY MEANS OF CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1970, 4 (02): : 207 - &
- [6] CALCULATION OF CURRENT-VOLTAGE CHARACTERISTICS OF ASYMMETRIC QUASIABRUPT P-N JUNCTIONS SOVIET PHYSICS SEMICONDUCTORS-USSR, 1971, 4 (11): : 1780 - &
- [7] CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN HEAVILY DOPED GALLIUM ARSENIDE SOVIET PHYSICS-SOLID STATE, 1964, 6 (05): : 1146 - 1151
- [8] CURRENT-VOLTAGE CHARACTERISTICS OF P-N JUNCTIONS IN HEAVILY DOPED GALLIUM ARSENIDE SOVIET PHYSICS SOLID STATE,USSR, 1964, 6 (05): : 1146 - +
- [10] METAL PRECIPITATES IN SILICON P-N JUNCTIONS JOURNAL OF APPLIED PHYSICS, 1960, 31 (10) : 1821 - 1824