FINE-STRUCTURE OF EL2 DEFECT ABSORPTION IN GAAS

被引：8
作者：
KUSZKO, W
JEZEWSKI, M
BARANOWSKI, JM
KAMINSKA, M
机构：
来源：
APPLIED PHYSICS LETTERS | 1988年 / 53卷 / 25期
关键词：
D O I：
10.1063/1.100207
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：2558 / 2559
页数：2
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[6]   FOURIER-TRANSFORM INFRARED-ABSORPTION STUDIES OF INTRACENTER TRANSITIONS IN THE EL2 LEVEL IN SEMIINSULATING BULK GAAS GROWN WITH THE LIQUID-ENCAPSULATED CZOCHRALSKI TECHNIQUE [J].
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