共 50 条
- [23] PROFILES OF DEFECTS PRODUCED BY IMPLANTATION OF IONS IN SILICON SOVIET PHYSICS SEMICONDUCTORS-USSR, 1975, 9 (05): : 551 - 553
- [24] ION IMPLANTATION DOPING OF SILICON FOR SHALLOW JUNCTIONS TRANSACTIONS OF THE METALLURGICAL SOCIETY OF AIME, 1969, 245 (03): : 469 - +
- [27] Dual arsenic and boron ion implantation in silicon 1600, American Inst of Physics, Woodbury, NY, USA (75):
- [29] Damage and dopant profiles produced by ultra-shallow boron and arsenic ion implants into silicon at different temperatures characterised by medium energy ion scattering. SILICON FRONT-END JUNCTION FORMATION TECHNOLOGIES, 2002, 717 : 303 - 308