PROFILES OF HIGH CONDUCTIVITY SHALLOW LAYERS IN SILICON PRODUCED BY BORON ION IMPLANTATION

被引：6

作者：

LARGE, LN

HILL, H

BALL, MP

机构：

来源：

关键词：

D O I：

10.1080/00207216708937951

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：153 / &

共 8 条

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DAVIES, JA
BROWN, F
BALL, GC
DOMEIJ, B
[J]. CANADIAN JOURNAL OF PHYSICS, 1964, 42 (06) : 1070 - &
[2] RESISTIVITY OF BULK SILICON AND OF DIFFUSED LAYERS IN SILICON
IRVIN, JC
[J]. BELL SYSTEM TECHNICAL JOURNAL, 1962, 41 (02): : 387 - +
[3] JOHNSON WS, APPL PHYS LETTERS, V9, P321
[4] KELLETT CM, 1966, AF196284970
[5] LARGE LN, 1966, 2 P INT C EL ION BEA
[6] LINDHARD J, 1963, MAT FYS MEDDR, V33
[7] PAVLOV PV, 1966, SOV PHYS SOLID STATE, V7, P2386
[8] PAVLOV PV, 1965, FIZ TVERD TELA, V7, P2940