SILICON RIBBON GROWTH VIA RIBBON-TO-RIBBON (RTR) TECHNIQUE - PROCESS UPDATE AND MATERIAL CHARACTERIZATION

被引:23
作者
GURTLER, RW
BAGHDADI, A
ELLIS, RJ
LESK, IA
机构
关键词
D O I
10.1007/BF02655648
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
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页码:441 / 477
页数:37
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共 15 条
[2]  
GURTLER RW, 1976, ERDAJPL954376762 REP
[3]  
GURTLER RW, UNPUBLISHED
[4]  
HOLDEN SC, 1977, ERDAJPL954374772 REP
[5]  
HORNSTRA J, 1959, PHILIPS RES REP, V14, P237
[6]   INFRARED STUDIES OF BIREFRINGENCE IN SILICON [J].
LEDERHANDLER, SR .
JOURNAL OF APPLIED PHYSICS, 1959, 30 (11) :1631-1638
[7]  
Lesk I. A., 1976, Twelfth IEEE Photovoltaic Specialists Conference 1976, P173
[8]  
MORRISON AD, 1976, ERDAJPL9543557611 AN
[9]  
RAVI KV, 1976, 12TH P IEEE PHOT SPE, P280
[10]  
REA SN, 1976, ERDAJPL763 REP