FLYING-SPOT SCANNING FOR THE SEPARATE MAPPING OF RESISTIVITY AND MINORITY-CARRIER LIFETIME IN SILICON

被引：6

作者：

BLEICHNER, H

NORDLANDER, E

FIEDLER, G

TOVE, PA

机构：

来源：

SOLID-STATE ELECTRONICS | 1986年 / 29卷 / 08期

关键词：

D O I：

10.1016/0038-1101(86)90179-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：779 / 786

页数：8

共 8 条

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[2] LASER SCANNING TECHNIQUE FOR THE DETECTION OF RESISTIVITY AND LIFETIME INHOMOGENEITIES IN SEMICONDUCTOR-DEVICES [J].

ENGSTROM, O ;

DRUGGE, B ;

TOVE, PA .

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[3] ELECTRON-BEAM EXCITED MINORITY-CARRIER DIFFUSION PROFILES IN SEMICONDUCTORS [J].

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[4] MEASUREMENT OF MINORITY-CARRIER DIFFUSION-COEFFICIENT IN SILICON BY AC PHOTO-CURRENT METHOD [J].

MOROHASHI, M ;

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SOMATANI, T ;

AKASAKI, I .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1983, 22 (02) :276-280

[5] MINORITY-CARRIER LIFETIME MAPPING IN SILICON USING A MICROPROCESSOR-CONTROLLED FLYING-SPOT SCANNER [J].

NORDLANDER, E ;

DRUGGE, B ;

TAPIA, M .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1985, 18 (01) :65-68

[6]

RYVKIN SM, 1964, PHOTOELECTRIC EFFECT, P11

[7]

SZE SM, 1969, PHYSICS SEMICONDUCTO

[8]

TAPIA M, 1983, IEEE T INSTRUM MEAS, V32, P4

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