PARAMAGNETIC RESONANCE OF COPPER IN AMORPHOUS AND POLYCRYSTALLINE GEO2

被引:49
|
作者
SIEGEL, I
LORENC, JA
机构
关键词
D O I
10.1063/1.1727927
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
引用
收藏
页码:2315 / &
相关论文
共 50 条
  • [21] ELECTRON SPIN RESONANCE AND OPTICAL ABSORPTION IN GEO2
    WEEKS, RA
    PURCELL, T
    JOURNAL OF CHEMICAL PHYSICS, 1965, 43 (02) : 483 - &
  • [22] Static and dynamic properties of simulated liquid and amorphous GeO2
    Hoang, VV
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2006, 18 (03) : 777 - 786
  • [23] NEUTRON INTERACTIONS WITH GERMANIUM ISOTOPES AND AMORPHOUS AND CRYSTALLINE GEO2
    KOESTER, L
    KNOPF, K
    WASCHKOWSKI, W
    ZEITSCHRIFT FUR PHYSIK A-HADRONS AND NUCLEI, 1987, 327 (02): : 129 - 136
  • [24] Electronic structure and optical properties of amorphous GeO2 in comparison to amorphous SiO2
    Walker, Benjamin
    Dharmawardhana, Chamila C.
    Dari, Naseer
    Rulis, Paul
    Ching, Wai-Yim
    JOURNAL OF NON-CRYSTALLINE SOLIDS, 2015, 428 : 176 - 183
  • [25] Yttrium passivation of defects in GeO2 and GeO2/Ge interfaces
    Li, Hongfei
    Robertson, John
    APPLIED PHYSICS LETTERS, 2017, 110 (03)
  • [26] Structural and vibrational properties of amorphous GeO2:: a molecular dynamics study
    Peralta, Joaquin
    Gutierrez, Gonzalo
    Rogan, Jose
    JOURNAL OF PHYSICS-CONDENSED MATTER, 2008, 20 (14)
  • [27] Control of Properties of GeO2 Films and Ge/GeO2 Interfaces by the Suppression of GeO Volatilization
    Kita, Koji
    Lee, Choong Hyun
    Nishimura, Tomonori
    Nagashio, Kosuke
    Toriumi, Akira
    SILICON NITRIDE, SILICON DIOXIDE, AND EMERGING DIELECTRICS 10, 2009, 19 (02): : 101 - 116
  • [28] The electron paramagnetic resonance in copper-modified amorphous carbon
    T. K. Zvonareva
    V. I. Ivanov-Omskii
    B. P. Popov
    K. F. Shtel’makh
    Technical Physics Letters, 2000, 26 : 1098 - 1101
  • [29] The electron paramagnetic resonance in copper-modified amorphous carbon
    Zvonareva, TK
    Ivanov-Omskii, VI
    Popov, BP
    Shtel'makh, KF
    TECHNICAL PHYSICS LETTERS, 2000, 26 (12) : 1098 - 1101
  • [30] First-principles study of Ge dangling bonds in GeO2 and correlation with electron spin resonance at Ge/GeO2 interfaces
    Houssa, M.
    Pourtois, G.
    Afanas'ev, V. V.
    Stesmans, A.
    APPLIED PHYSICS LETTERS, 2011, 99 (21)