COMPARISON OF RANGE AND RANGE STRAGGLING OF IMPLANTED B-10 AND B-11 IN SILICON

被引：23
作者：
RYSSEL, H
KRANZ, H
MULLER, K
HENKELMANN, RA
BIERSACK, J
机构：
[1] INST FESTKORPERTECHNOL,D-8000 MUNCHEN 60,FED REP GER
[2] INST RADIOCHEM,D-8046 GARCHING,FED REP GER
[3] HAHN MEITNER INST,D-1000 BERLIN,FED REP GER
来源：
APPLIED PHYSICS LETTERS | 1977年 / 30卷 / 08期
关键词：
D O I：
10.1063/1.89419
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
引用
收藏
页码：399 / 401
页数：3
相关论文
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