PRESSURE-INDUCED METALLIZATION OF ZNSE

被引:53
作者
ITKIN, G [1 ]
HEARNE, GR [1 ]
STERER, E [1 ]
PASTERNAK, MP [1 ]
POTZEL, W [1 ]
机构
[1] TECH UNIV MUNICH,DEPT PHYS E15,W-8000 MUNICH,GERMANY
来源
PHYSICAL REVIEW B | 1995年 / 51卷 / 05期
关键词
D O I
10.1103/PhysRevB.51.3195
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
High-pressure studies of the resistivity R of the direct-gap insulator ZnSe were carried out using diamond-anvil cells. The pressure dependence R(P) at 300 K in the pressure range of 020 GPa revealed a drastic drop in the resistance at P=13.5 GPa and upon decompression recovery of the insulating state at 10.5 GPa. From the temperature dependence of the resistance at P>13.5 GPa it has been concluded that (i) narrow-gap semiconducting and metallic phases coexist in the range 13.515 GPa, and (ii) a pure metallic state, characterized by a positive temperature slope and small resistivity value, exists at P>17 GPa. The results are discussed in terms of previous optical data and band-structure calculations. © 1995 The American Physical Society.
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收藏
页码:3195 / 3197
页数:3
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