ALLOY-ASSISTED ANGER RECOMBINATION IN TERNARY III-V COMPOUNDS

[1] THE MAJORITY CARRIER MOBILITY OF N-TYPE AND P-TYPE HG0.78CD0.22TE LIQUID-PHASE EPITAXIAL-FILMS AT 77-K [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) : 2916 - 2920

[2] THEORETICAL CALCULATIONS OF ELECTRON-MOBILITY IN TERNARY 3-5 COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) : 292 - 300

[3] ALLOY SCATTERING IN TERNARYIII-V COMPOUNDS [J]. PHYSICAL REVIEW B, 1976, 13 (12): : 5347 - 5350

[4] CALCULATION OF AUGER COEFFICIENTS FOR III-V SEMICONDUCTORS WITH EMPHASIS ON GASB [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : 357 - 365

[5] BAND-TO-BAND AUGER RECOMBINATION IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1988, 49 (06) : 599 - 605

[6] ALLOY-DISORDER-INDUCED INTERVALLEY COUPLING [J]. PHYSICAL REVIEW B, 1991, 43 (15): : 12364 - 12373

[7] KELSALL RW, 1992, SEMICOND SCI TECH, V7, P312

[8] PHONON-ASSISTED AUGER RECOMBINATION IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01): : 285 - 292

[9] EFFECTS OF COMPOSITIONAL CLUSTERING ON ELECTRON-TRANSPORT IN IN0.53GA0.47AS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 732 - 734

[10] ALLOY DISORDER SCATTERING CONTRIBUTION TO LOW-TEMPERATURE ELECTRON-MOBILITY IN SEMICONDUCTOR QUANTUM WELL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 368 - 374

[1] THE MAJORITY CARRIER MOBILITY OF N-TYPE AND P-TYPE HG0.78CD0.22TE LIQUID-PHASE EPITAXIAL-FILMS AT 77-K [J]. JOURNAL OF APPLIED PHYSICS, 1993, 73 (06) : 2916 - 2920

[2] THEORETICAL CALCULATIONS OF ELECTRON-MOBILITY IN TERNARY 3-5 COMPOUNDS [J]. JOURNAL OF APPLIED PHYSICS, 1976, 47 (01) : 292 - 300

[3] ALLOY SCATTERING IN TERNARYIII-V COMPOUNDS [J]. PHYSICAL REVIEW B, 1976, 13 (12): : 5347 - 5350

[4] CALCULATION OF AUGER COEFFICIENTS FOR III-V SEMICONDUCTORS WITH EMPHASIS ON GASB [J]. PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 89 (02): : 357 - 365

[5] BAND-TO-BAND AUGER RECOMBINATION IN SEMICONDUCTORS [J]. JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1988, 49 (06) : 599 - 605

[6] ALLOY-DISORDER-INDUCED INTERVALLEY COUPLING [J]. PHYSICAL REVIEW B, 1991, 43 (15): : 12364 - 12373

[7] KELSALL RW, 1992, SEMICOND SCI TECH, V7, P312

[8] PHONON-ASSISTED AUGER RECOMBINATION IN SEMICONDUCTORS [J]. PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1977, 40 (01): : 285 - 292

[9] EFFECTS OF COMPOSITIONAL CLUSTERING ON ELECTRON-TRANSPORT IN IN0.53GA0.47AS [J]. APPLIED PHYSICS LETTERS, 1982, 41 (08) : 732 - 734

[10] ALLOY DISORDER SCATTERING CONTRIBUTION TO LOW-TEMPERATURE ELECTRON-MOBILITY IN SEMICONDUCTOR QUANTUM WELL STRUCTURES [J]. JOURNAL OF APPLIED PHYSICS, 1984, 56 (02) : 368 - 374