DAMAGE AND LATTICE LOCATION STUDIES IN HIGH-TEMPERATURE ION-IMPLANTED DIAMOND

被引：42

作者：

BRAUNSTEIN, G ^{[1
]}

KALISH, R ^{[1
]}

机构：

[1] TECHNION ISRAEL INST TECHNOL,DEPT PHYS,HAIFA,ISRAEL

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 06期

关键词：

D O I：

10.1063/1.92400

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：416 / 418

页数：3

共 11 条

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[7] INTRINSIC LIMITATIONS OF DOPING DIAMONDS BY HEAVY-ION IMPLANTATION [J].

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[8]

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