DAMAGE AND LATTICE LOCATION STUDIES IN HIGH-TEMPERATURE ION-IMPLANTED DIAMOND

[1] RADIATION-DAMAGE AND ANNEALING IN SB IMPLANTED DIAMOND [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 139 - 144

[2] LATTICE LOCATION OF LOW-Z IMPURITIES IN MEDIUM-Z TARGETS USING ION-INDUCED X-RAYS .1. ANALYTICAL TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 532 - 536

[3] CHEMIN JF, 1974, J APPL PHYS, V45, P537, DOI 10.1063/1.1663279

[4] Chu W.-K., 1978, BACKSCATTERING SPECT, P269

[5] DAVIES JA, 1973, CHANNELING

[6] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 675 - +

[7] INTRINSIC LIMITATIONS OF DOPING DIAMONDS BY HEAVY-ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6870 - 6872

[8] NELSON RS, 1980, ION BEAM MODIFICATIO

[9] VAVILOV V, COMMUNICATION

[10] ION-IMPLANTATION INTO DIAMOND [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (3-4): : 229 - 236

[1] RADIATION-DAMAGE AND ANNEALING IN SB IMPLANTED DIAMOND [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1980, 48 (1-4): : 139 - 144

[2] LATTICE LOCATION OF LOW-Z IMPURITIES IN MEDIUM-Z TARGETS USING ION-INDUCED X-RAYS .1. ANALYTICAL TECHNIQUE [J]. JOURNAL OF APPLIED PHYSICS, 1974, 45 (02) : 532 - 536

[3] CHEMIN JF, 1974, J APPL PHYS, V45, P537, DOI 10.1063/1.1663279

[4] Chu W.-K., 1978, BACKSCATTERING SPECT, P269

[5] DAVIES JA, 1973, CHANNELING

[6] ELECTRICAL AND PHYSICAL MEASUREMENTS ON SILICON IMPLANTED WITH CHANNELED AND NONCHANNELED DOPANT IONS [J]. CANADIAN JOURNAL OF PHYSICS, 1968, 46 (06) : 675 - +

[7] INTRINSIC LIMITATIONS OF DOPING DIAMONDS BY HEAVY-ION IMPLANTATION [J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) : 6870 - 6872

[8] NELSON RS, 1980, ION BEAM MODIFICATIO

[9] VAVILOV V, COMMUNICATION

[10] ION-IMPLANTATION INTO DIAMOND [J]. RADIATION EFFECTS AND DEFECTS IN SOLIDS, 1978, 37 (3-4): : 229 - 236