ANISOTROPY OF OPTICAL-TRANSITIONS IN (110)-ORIENTED QUANTUM-WELLS

被引：26

作者：

NOJIMA, S

机构：

[1] NTT Opto-electronics Laboratories, 3-1 Morinosato-Wakamiya, Atsugi, 3

来源：

PHYSICAL REVIEW B | 1993年 / 47卷 / 20期

关键词：

D O I：

10.1103/PhysRevB.47.13535

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The in-plane anisotropy of interband optical transitions is theoretically investigated for GaAs/Al0.3Ga0.7As and GaAs/AlAs (110)-oriented quantum-well films. This calculation takes into account the multiplicity of the valence band including the split-off state. The anisotropy analysis reveals that the well-width variation induces an exchange of heavy-hole-like or light-hole-like attributes between the two excited subband states in the valence band. The anisotropy is enhanced to a remarkable degree by narrowing the well, especially in GaAs/AlAs. This theory also clarifies that the pronounced well-width dependence of anisotropy is caused by the presence of the split-off state.

引用

页码：13535 / 13539

页数：5

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