LACK OF IMPORTANCE OF AMBIENT GASES ON PICOSECOND LASER-INDUCED PHASE-TRANSITIONS OF SILICON

被引:11
作者
LIU, JM [1 ]
YEN, R [1 ]
DONOVAN, EP [1 ]
BLOEMBERGEN, N [1 ]
HODGSON, RT [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.92454
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:617 / 619
页数:3
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[21]   ON THE INVESTIGATION OF LASER-INDUCED CARRIERS IN SILICON IN THE PICOSECOND TIME RANGE [J].
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