LACK OF IMPORTANCE OF AMBIENT GASES ON PICOSECOND LASER-INDUCED PHASE-TRANSITIONS OF SILICON

被引:11
作者
LIU, JM [1 ]
YEN, R [1 ]
DONOVAN, EP [1 ]
BLOEMBERGEN, N [1 ]
HODGSON, RT [1 ]
机构
[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598
关键词
D O I
10.1063/1.92454
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:617 / 619
页数:3
相关论文
共 50 条
  • [21] ON THE INVESTIGATION OF LASER-INDUCED CARRIERS IN SILICON IN THE PICOSECOND TIME RANGE
    BERGNER, H
    BRUCKNER, V
    OPTICAL AND QUANTUM ELECTRONICS, 1983, 15 (06) : 477 - 485
  • [22] SPACE-TIME RESOLVED REFLECTIVITY MEASUREMENTS OF PICOSECOND LASER-PULSE INDUCED PHASE-TRANSITIONS IN (111) SILICON SURFACE-LAYERS
    YEN, R
    LIU, JM
    KURZ, H
    BLOEMBERGEN, N
    APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1982, 27 (03): : 153 - 160
  • [23] CHARACTERISTICS OF PHASE-TRANSITIONS DURING NANOSECOND LASER SILICON ANNEALING
    ZHVAVYI, SP
    SADOVSKAYA, OL
    PISMA V ZHURNAL TEKHNICHESKOI FIZIKI, 1987, 13 (19): : 1171 - 1176
  • [24] PHASE-TRANSITIONS IN SEMICONDUCTING SILICON
    TARAN, YN
    KUTSOVA, VZ
    UZLOV, KI
    FALKEVICH, ES
    INORGANIC MATERIALS, 1991, 27 (11) : 1899 - 1903
  • [25] Ultrafast laser-induced phase transitions in tellurium
    S. I. Ashitkov
    M. B. Agranat
    P. S. Kondratenko
    S. I. Anisimov
    V. E. Fortov
    V. V. Temnov
    K. Sokolowski-Tinten
    B. Rethfeld
    P. Zhou
    D. von der Linde
    Journal of Experimental and Theoretical Physics Letters, 2002, 76 : 461 - 464
  • [26] Laser-induced damage in a silicon-based photodiode by MHz picosecond laser
    Wang, Kaixuan
    Yu, Xuyang
    Li, Pingxue
    Wang, Tingting
    Zhang, Yuefei
    Li, Chunyong
    LASER PHYSICS, 2020, 30 (07)
  • [27] Ultrafast laser-induced phase transitions in tellurium
    Ashitkov, SI
    Agranat, MB
    Kondratenko, PS
    Anisimov, SI
    Fortov, VE
    Temnov, VV
    Sokolowski-Tinten, K
    Rethfeld, B
    Zhou, P
    von der Linde, D
    JETP LETTERS, 2002, 76 (07) : 461 - 464
  • [28] TEMPORAL CHANGES IN REFLECTIVITY OF CRYSTALLINE SILICON IN PICOSECOND LASER-INDUCED MELTING
    KANEMITSU, Y
    KURODA, H
    SHIONOYA, S
    JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1984, 23 (07): : 940 - 940
  • [29] Laser-induced damage threshold of silicon in millisecond, nanosecond, and picosecond regimes
    Wang, X.
    Shen, Z. H.
    Lu, J.
    Ni, X. W.
    JOURNAL OF APPLIED PHYSICS, 2010, 108 (03)
  • [30] Picosecond laser-induced periodic surface structures (LIPSS) on crystalline silicon
    Gao, Yu-Fan
    Yu, Cai-Yun
    Han, Bing
    Ehrhardt, Martin
    Lorenz, Pierre
    Xu, Ling-Fei
    Zhu, Ri-Hong
    SURFACES AND INTERFACES, 2020, 19