LACK OF IMPORTANCE OF AMBIENT GASES ON PICOSECOND LASER-INDUCED PHASE-TRANSITIONS OF SILICON

被引：11

作者：

LIU, JM ^{[1
]}

YEN, R ^{[1
]}

DONOVAN, EP ^{[1
]}

BLOEMBERGEN, N ^{[1
]}

HODGSON, RT ^{[1
]}

机构：

[1] IBM CORP,THOMAS J WATSON RES CTR,YORKTOWN HTS,NY 10598

来源：

APPLIED PHYSICS LETTERS | 1981年 / 38卷 / 08期

关键词：

D O I：

10.1063/1.92454

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：617 / 619

页数：3

共 9 条

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[2] INCORPORATION OF OXYGEN INTO SILICON DURING PULSED-LASER IRRADIATION [J].

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[3] INFLUENCE OF O-16, C-12, N-14, AND NOBLE-GASES ON CRYSTALLIZATION OF AMORPHOUS SI LAYERS [J].

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SIGMON, TW .

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[4] PICOSECOND LASER-INDUCED MELTING AND RESOLIDIFICATION MORPHOLOGY ON SI [J].

LIU, PL ;

YEN, R ;

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HODGSON, RT .

APPLIED PHYSICS LETTERS, 1979, 34 (12) :864-866

[5]

LIU YS, 1981, LASER ELECTRON BEAM

[6]

ROBERTS RW, 1963, ULTRAHIGH VACUUM ITS, P3

[7] ORDER-DISORDER TRANSITION IN SINGLE-CRYSTAL SILICON INDUCED BY PULSED UV LASER IRRADIATION [J].

TSU, R ;

HODGSON, RT ;

TAN, TY ;

BAGLIN, JE .

PHYSICAL REVIEW LETTERS, 1979, 42 (20) :1356-1358

[8]

WHITE CJ, COMMUNICATION

[9] PREPARATION OF ATOMICALLY CLEAN SILICON SURFACES BY PULSED LASER IRRADIATION [J].

ZEHNER, DM ;

WHITE, CW ;

OWNBY, GW .

APPLIED PHYSICS LETTERS, 1980, 36 (01) :56-59

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