CONTROL OF ELECTRICAL-CONDUCTIVITY BY HOT-ELECTRON INTER-VALLEY TRANSFER IN N-TYPE SILICON

被引：1
作者：
TOYOTOMI, S
机构：
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS | 1980年 / 19卷 / 03期
关键词：
D O I：
10.1143/JJAP.19.569
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
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页码：569 / 570
页数：2
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