KINETICS OF CHEMICAL VAPOR-DEPOSITION OF TITANIUM NITRIDE

Titanium nitride was deposited from the reactant gases H2, N2, and TiCl4 at atmospheric pressure. The weight change of the sample was noted by means of a thermobalance. Stainless steel was used as the substrate. It has been found that the deposited film is TiN by the use of x-ray diffraction. Under experimental conditions of minimal influence by mass-trans-port control, the deposition rate was in proportion to the square root of the partial pressures of hydrogen and nitrogen, respectively. The deposition rate decreased with increasing partial pressure of TiCl4 under the experimental conditions employed in this study. By comparing these results with Langmuir-Hinshelwood—type equations, it has been suggested that the probable rate-controlling step is the reaction of hydrogen atoms with nitrogen atoms on the reaction surface or the adsorption of hydrogen molecules and that of nitrogen molecules on the surface. The extent of surface coverage by these atoms is considered to have been reduced when the partial pressure of TiCl4 is increased, due to competitive adsorption. © 1990, The Electrochemical Society, Inc. All rights reserved.