DIRECT DETERMINATION OF OPTICAL GAIN IN SEMICONDUCTOR CRYSTALS

[1] Benoit C., 1969, PHYS REV, V177, P567

[2] GOOCH CH, 1969, GALLIUM ARSENIDE LAS, P87

[3] NEW MODEL FOR TEMPERATURE-DEPENDENT CDS LASER [J]. APPLIED PHYSICS LETTERS, 1970, 17 (11) : 494 - &

[4] LITTON CW, 1967, 2 6 SEMICONDUCTING C, P694

[5] EXCITON-EXCITON INTERACTION IN CDS, CDSE, AND ZNO [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (16) : 890 - &

[6] SINGLE PASS GAIN OF EXCIPLEX 4-MU AND RHODAMINE 6G DYE LASER AMPLIFIERS [J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 307 - &

[7] SIX DB/CM SINGLE-PASS GAIN AT 7229 A IN LEAD VAPOR [J]. APPLIED PHYSICS LETTERS, 1967, 11 (03) : 97 - &

[1] Benoit C., 1969, PHYS REV, V177, P567

[2] GOOCH CH, 1969, GALLIUM ARSENIDE LAS, P87

[3] NEW MODEL FOR TEMPERATURE-DEPENDENT CDS LASER [J]. APPLIED PHYSICS LETTERS, 1970, 17 (11) : 494 - &

[4] LITTON CW, 1967, 2 6 SEMICONDUCTING C, P694

[5] EXCITON-EXCITON INTERACTION IN CDS, CDSE, AND ZNO [J]. PHYSICAL REVIEW LETTERS, 1970, 24 (16) : 890 - &

[6] SINGLE PASS GAIN OF EXCIPLEX 4-MU AND RHODAMINE 6G DYE LASER AMPLIFIERS [J]. APPLIED PHYSICS LETTERS, 1970, 17 (07) : 307 - &

[7] SIX DB/CM SINGLE-PASS GAIN AT 7229 A IN LEAD VAPOR [J]. APPLIED PHYSICS LETTERS, 1967, 11 (03) : 97 - &