CW PERFORMANCE OF SILICON IMPATT DIODES

被引：0

|

作者：

KONDO, M

MATSUMURA, M

OKUTO, Y

NAGASHIMA, I

机构：

来源：

NEC RESEARCH & DEVELOPMENT | 1970年 / 18期

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D O I：

暂无

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：7 / +

页数：1

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