TRANSPORT PROPERTIES OF METAL-SILICON SCHOTTKY BARRIERS

被引:43
作者
ARIZUMI, T
HIROSE, M
机构
关键词
D O I
10.1143/JJAP.8.749
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:749 / +
页数:1
相关论文
共 16 条
[1]  
ARIZUMI T, TO BE PUBLISHED
[2]  
ARIZUMI T, 1967, J I ELECT COMMUN ENG, V50, P1610
[3]   EQUALITY OF TEMPERATURE DEPENDENCE OF GOLD-SILICON SURFACE BARRIER + SILICON ENERGY GAP IN AU N-TYPE SI DIODES ( PHOTOEMISSION THRESHOLD ANALYSIS 100-370 DEGREES K E ) [J].
CROWELL, CR ;
SZE, SM ;
SPITZER, WG .
APPLIED PHYSICS LETTERS, 1964, 4 (05) :91-&
[4]   RICHARDSON CONSTANT FOR THERMIONIC EMISSION IN SCHOTTKY BARRIER DIODES [J].
CROWELL, CR .
SOLID-STATE ELECTRONICS, 1965, 8 (04) :395-&
[5]   CURRENT TRANSPORT IN METAL-SEMICONDUCTOR BARRIERS [J].
CROWELL, CR ;
SZE, SM .
SOLID-STATE ELECTRONICS, 1966, 9 (11-1) :1035-&
[6]   CONDUCTION PROPERTIES OF THE AU-NORMAL-TYPE-SI SCHOTTKY BARRIER [J].
KAHNG, D .
SOLID-STATE ELECTRONICS, 1963, 6 (03) :281-295
[7]   SILICON SCHOTTKY BARRIER DIODE WITH NEAR-IDEAL I-V CHARACTERISTICS [J].
LEPSELTE.MP ;
SZE, SM .
BELL SYSTEM TECHNICAL JOURNAL, 1968, 47 (02) :195-+
[8]   FIELD AND THERMIONIC-FIELD EMISSION IN SCHOTTKY BARRIERS [J].
PADOVANI, FA ;
STRATTON, R .
SOLID-STATE ELECTRONICS, 1966, 9 (07) :695-&
[9]   THERMIONIC EMISSION IN AU-GAAS SCHOTTKY BARRIERS [J].
PADOVANI, FA .
SOLID-STATE ELECTRONICS, 1968, 11 (02) :193-+
[10]   EXPERIMENTAL STUDY OF GOLD-GALLIUM ARSENIDE SCHOTTKY BARRIERS [J].
PADOVANI, FA ;
SUMNER, GG .
JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3744-&