Morphologic and cathodoluminescence studies of diamond films by scanning electron microscopy

被引:0
作者
Saparin, GV
Obyden, SK
机构
关键词
scanning electron microscopy; cathodoluminescence; chemical vapor deposition diamond films; diamond film quality;
D O I
暂无
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
Using recent papers on scanning electron microscopy (SEM) of chemical vapor deposition (CVD) diamond films, two analytical applications of the SEM are discussed: the morphologic investigations (secondary electron emission mode) and the recognition of impurities and defects [cathodoluminescence (CL) mode]. Studies of CVD diamond films by SEM demonstrate that the morphologies of these films are affected by synthesis conditions, especially by substrate temperature, methane concentration, and total pressure hi the reactor. CL spectra and images are useful tools for clarifying the relationship between emission centers and different types of defects generated during the process of diamond crystal growth. The paper shows that the investigations of the morphology, crystallinity, local CL emission, as well as the surface distribution of CL spectra on CVD diamond films by SEM led to the correlative information for quality estimation of films in comparison with natural diamond.
引用
收藏
页码:337 / 347
页数:11
相关论文
共 50 条
[1]  
AKASHI M, 1993, DIAM RELAT MATER, V2, P183
[2]   OPTICAL CHARACTERIZATION OF DIAMOND [J].
BACHMANN, PK ;
WIECHERT, DU .
DIAMOND AND RELATED MATERIALS, 1992, 1 (5-6) :422-433
[3]  
BACHMANN PK, 1989, 3RD P INT C SURF MOD, P69
[4]   GROWTH MECHANISMS OF DIAMOND CRYSTALS AND FILMS PREPARED BY CHEMICAL VAPOR-DEPOSITION [J].
BONNOT, AM ;
MATHIS, BS ;
MERCIER, J ;
LEROY, J ;
VITTON, JP .
DIAMOND AND RELATED MATERIALS, 1992, 1 (2-4) :230-234
[5]   THE INFLUENCE OF METHANE CONCENTRATION, SUBSTRATE-TEMPERATURE, AND PRESSURE ON THE MORPHOLOGY OF DIAMOND FILMS GROWN BY DC PLASMA-JET CVD [J].
BOUDINA, A ;
FITZER, E ;
WAHL, G .
DIAMOND AND RELATED MATERIALS, 1992, 1 (2-4) :248-254
[6]  
BOUDINA A, 1991, BOCHUM, V3, P1
[7]   CHARACTERIZATION OF DIAMOND FILMS DEPOSITED USING C3H6OX-H2 GAS-MIXTURES [J].
CHEN, CF ;
CHEN, SH ;
HONG, TM ;
WU, SH .
DIAMOND AND RELATED MATERIALS, 1993, 2 (5-7) :732-736
[8]  
CROOKES W, 1979, PHIL T ROY SOC LON 1, P135
[9]   VACANCY COMPLEXES IN DIAMOND [J].
DAVIES, G ;
COLLINS, AT .
DIAMOND AND RELATED MATERIALS, 1993, 2 (2-4) :80-86
[10]  
DAVIES G, 1979, PROPERTIES DIAMOND, pCH5