PERFORMANCE AND RELIABILITY IMPROVEMENTS IN POLY-SI TFTS BY FLUORINE IMPLANTATION INTO GATE POLY-SI

被引：22

作者：

MAEGAWA, S ^{[1
]}

IPPOSHI, T ^{[1
]}

MAEDA, S ^{[1
]}

NISHIMURA, H ^{[1
]}

ICHIKI, T ^{[1
]}

ASHIDA, M ^{[1
]}

TANINA, O ^{[1
]}

INOUE, Y ^{[1
]}

NISHIMURA, T ^{[1
]}

TSUBOUCHI, N ^{[1
]}

机构：

[1] RYODEN SEMICOND SYST ENGN CORP, ITAMI, HYOGO, JAPAN

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1995年 / 42卷 / 06期

关键词：

D O I：

10.1109/16.387244

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

High-performance and high-reliability TFT's have been obtained using a fluorine ion implantation technique, The fluorine implantation into the gate poly-Si of TFT caused a positive Vth shift, increased the ON current, and decreased the leakage current significantly, Our investigation indicates that the Vth shift originates from negative charges generated in the gate oxide by the fluorine implantation, The improvement of drain current is attributed to fluorine passivation of trap states in the poly-Si and to a modulation of offset potential due to the same negative charges under the offset region, Furthermore, high immunity against the -BT stress and TDDB of the gate oxide was achieved by the fluorine implantation, It is considered that the strong Si-F bonds created by the fluorine implantation raise the stress immunity.

引用

页码：1106 / 1112

页数：7

共 9 条

[1] ANOMALOUS LEAKAGE CURRENT IN LPCVD POLYSILICON MOSFETS [J].