EFFECT OF LOW-TEMPERATURE ANNEALING ON THE SURFACE-STATE OF A-SI-H FILMS

被引：1

作者：

ISHIKAWA, K

OKADA, K

AKIMOTO, M

GEKKA, Y

机构：

[1] Department of Electronics, Faculty of Engineering, Tokai University, Hiratsuka, Kanagawa, 259-12

来源：

APPLIED SURFACE SCIENCE | 1993年 / 70-1卷 / 1 -4 pt B期

关键词：

12;

D O I：

10.1016/0169-4332(93)90603-9

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

The current transport in metal/a-Si:H contacts was largely affected by low temperature annealing of a-Si:H in high vacuum prior to the formation of metal contacts. This effect was considered to originate from the decrease of the density of surface states in the a-Si: H surface under the low temperature annealing process. A primitive experiment was applied for confirmation of the existence of surface states in a-Si : H films, by measurement of current-voltage (J-V) characteristics of the a-Si:H/a-Si:H contact diode in which two a-Si: H surfaces were contacted face-to-face. The difference between the J-V characteristic of the a-Si:H/a-Si:H contact diode composed of a-Si:H films as deposited and that of the a-Si:H films annealed at low temperature verified that the density of surface states of the a-Si: H film remarkably decreases by low temperature annealing.

引用

页码：691 / 694

页数：4

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