EDGE MELTING OF THE GE(111) SURFACE STUDIED BY SCANNING TUNNELING MICROSCOPY

被引：30

作者：

FEENSTRA, RM ^{[1
]}

SLAVIN, AJ ^{[1
]}

HELD, GA ^{[1
]}

LUTZ, MA ^{[1
]}

机构：

[1] TRENT UNIV,DEPT PHYS,PETERBOROUGH K9J 7B8,ONTARIO,CANADA

来源：

ULTRAMICROSCOPY | 1992年 / 42卷

关键词：

D O I：

10.1016/0304-3991(92)90243-D

中图分类号：

TH742 [显微镜];

学科分类号：

摘要：

The scanning tunneling microscope (STM) is used to study the disordering of the Ge(111)c(2 x 8) surface, at temperatures in the range 150-350-degrees-C. The disorder occurs by the diffusion of surface adatoms in the [011BAR] directions. Disordered regions form at domain boundaries of the c(2 x 8) structure, and grow in size continuously with temperature until the entire surface becomes disordered at about 300-degrees-C. This order-disorder transition is identified as an example of premelting in two dimensions, i.e. edge melting. Thus, the phase transition would be first-order for an infinite size c(2x8) domain, but is actually continuous due to the occurrence of premelting at the domain boundaries.

引用

页码：33 / 40

页数：8

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