OBSERVATIONS OF STRESSES IN THIN-FILMS OF PALLADIUM AND PLATINUM SILICIDES ON SILICON

被引：34

作者：

ANGILELLO, J

HEURLE, FD

PETERSON, S

SEGMULLER, A

机构：

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1980年 / 17卷 / 01期

关键词：

D O I：

10.1116/1.570486

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：471 / 475

页数：5

共 26 条

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[3]

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[6]

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[7] CALCULATED ELASTIC-CONSTANTS FOR STRESS PROBLEMS ASSOCIATED WITH SEMICONDUCTOR DEVICES [J].

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[8]

CANALI C, 1978, THIN FILM PHENOMENA, P38

[9] IMPLANTED NOBLE-GAS ATOMS AS DIFFUSION MARKERS IN SILICIDE FORMATION [J].

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[10]

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