ION-BEAM ASSISTED DEPOSITION OF SUBSTOICHIOMETRIC SILICON-NITRIDE

被引：29

作者：

DONOVAN, EP

BRIGHTON, DR

HUBLER, GK

VANVECHTEN, D

机构：

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1987年 / 19-20卷

关键词：

D O I：

10.1016/S0168-583X(87)80196-9

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

引用

页码：983 / 986

页数：4

共 12 条

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[8] OPTICAL EFFECTS RESULTING FROM DEEP IMPLANTS OF SILICON WITH NITROGEN AND PHOSPHORUS [J].

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[9]

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[10] REFRACTIVE-INDEX PROFILES AND RANGE DISTRIBUTIONS OF SILICON IMPLANTED WITH HIGH-ENERGY NITROGEN [J].

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MALMBERG, PR ;

SMITH, TP .

JOURNAL OF APPLIED PHYSICS, 1979, 50 (11) :7147-7155

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