MECHANISMS FOR LOW-FREQUENCY OSCILLATIONS IN GAAS-FETS

被引：28

作者：

MILLER, DJ ^{[1
]}

BUJATTI, M ^{[1
]}

机构：

[1] HEWLETT PACKARD CO,DIV MICROWAVE TECHNOL,SANTA ROSA,CA 95401

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 1987年 / 34卷 / 06期

关键词：

D O I：

10.1109/T-ED.1987.23076

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：1239 / 1244

页数：6

共 12 条

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[4]

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[5]

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[7]

Miller D., 1985, GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. Technical Digest 1985 (Cat. No.85CH2182-4), P31

[8] MECHANISM FOR NEGATIVE DIFFERENTIAL RESISTANCE IN III-V AND II-VI SEMICONDUCTORS ASSOCIATED WITH ENHANCED RADIATIVE-CAPTURE OF HOT-ELECTRONS [J].

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[9] INFLUENCE OF TRAPS ON WATKINS-GUNN EFFECT [J].

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[10] EXPERIMENTAL STUDY OF HIGH-FIELD MOVING DOMAINS PRODUCED BY DEEP CENTRES IN SEMI-INSULATING GAAS [J].

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