REDUCTION OF LINEWIDTH ENHANCEMENT FACTOR IN INGAASP-INP MODULATION-DOPED STRAINED MULTIPLE-QUANTUM-WELL LASERS

被引：31
作者：
KANO, F
YAMANAKA, T
YAMAMOTO, N
YOSHIKUNI, Y
MAWATARI, H
TOHMORI, Y
YAMAMOTO, M
YOKOYAMA, K
机构：
[1] NTT Opto-electronics Laboratories, Atsugi-shi, Kanagawa, 243-01
来源：
IEEE JOURNAL OF QUANTUM ELECTRONICS | 1993年 / 29卷 / 06期
关键词：
D O I：
10.1109/3.234405
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
The linewidth enchancement factor alpha in InGa-AsP-InP modulation-doped strained multiple-quantum-well (MQW) lasers has been evaluated theoretically and experimentally. A reduction of the alpha-parameter due to modulation doping is demonstrated. A small alpha-parameter of less than 1 is obtained not at wavelength for the gain peak but within certain range of wavelength where the gain is positive. The smaller alpha-parameter in modulation-doped strained MQW lasers should result in performance improvements that are advantageous for optical communication system applications.
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收藏
页码：1553 / 1559
页数：7
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