TIME-DEPENDENCE AND OPTICAL QUENCHING OF PHOTOLUMINESCENCE IN POROUS SILICON

被引：24
|
作者：
LAIHO, R [1 ]
PAVLOV, A [1 ]
HOVI, O [1 ]
TSUBOI, T [1 ]
机构：
[1] KYOTO SANGYO UNIV,FAC ENGN,KAMIGAMO,KYOTO 603,JAPAN
来源：
APPLIED PHYSICS LETTERS | 1993年 / 63卷 / 03期
关键词：
D O I：
10.1063/1.110076
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We have investigated time dependence and light-induced quenching of photoluminescence (PL) in porous Si samples. After excitation with a N2 laser pulse, a shift of the maximum of the emission band from 630 to 680 nm within a time interval of 3 < t < 100 mus was observed. A consistent description of the PL data is obtained by using a model based on three different electron-hole recombination processes in the sample. Measurements of light-induced quenching of PL show great similarities with fatigue of photocurrent in illuminated hydrogenated amorphous silicon.
引用
收藏
页码：275 / 277
页数：3
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