POLYSILICON STRAIN SENSORS USING SHEAR PIEZORESISTANCE

被引：13

作者：

FRENCH, PJ

EVANS, AGR

机构：

[1] DELFT UNIV TECHNOL,DEPT ELECT ENGN,DELFT,NETHERLANDS

[2] UNIV SOUTHAMPTON,DEPT ELECTR & COMP SCI,SOUTHAMPTON SO9 5NH,HANTS,ENGLAND

来源：

SENSORS AND ACTUATORS | 1988年 / 15卷 / 03期

关键词：

D O I：

10.1016/0250-6874(88)87015-X

中图分类号：

O65 [分析化学];

学科分类号：

070302 ; 081704 ;

摘要：

引用

页码：257 / 272

页数：16

共 13 条

[1]

DALLY JW, 1978, EXPT STRESS ANAL, P26

[2] POLYCRYSTALLINE SILICON STRAIN SENSORS [J].

FRENCH, PJ ;

EVANS, AGR .

SENSORS AND ACTUATORS, 1985, 8 (03) :219-225

[3] POLYCRYSTALLINE SILICON AS A STRAIN-GAUGE MATERIAL [J].

FRENCH, PJ ;

EVANS, AGR .

JOURNAL OF PHYSICS E-SCIENTIFIC INSTRUMENTS, 1986, 19 (12) :1055-1058

[4] HALL VOLTAGE IN AN INHOMOGENEOUS MATERIAL [J].

HELESKIVI, J ;

SALO, T .

JOURNAL OF APPLIED PHYSICS, 1972, 43 (02) :740-+

[5] STRUCTURE AND STABILITY OF LOW-PRESSURE CHEMICALLY VAPOR-DEPOSITED SILICON FILMS [J].

KAMINS, TI ;

MANDURAH, MM ;

SARASWAT, KC .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (06) :927-932

[6] GRAPHICAL REPRESENTATION OF THE PIEZORESISTANCE COEFFICIENTS IN SILICON-SHEAR COEFFICIENTS IN PLANE [J].

KANDA, Y .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS, 1987, 26 (07) :1031-1033

[7] HALL-EFFECT DEVICES AS STRAIN AND PRESSURE SENSORS [J].

KANDA, Y ;

YASUKAWA, A .

SENSORS AND ACTUATORS, 1982, 2 (03) :283-296

[8] MEASUREMENT OF THE ELASTIC CONSTANTS OF SILICON SINGLE CRYSTALS AND THEIR THERMAL COEFFICIENTS [J].

MCSKIMIN, HJ ;

BOND, WL ;

BUEHLER, E ;

TEAL, GK .

PHYSICAL REVIEW, 1951, 83 (05) :1080-1080

[9] ANALYSIS AND DESIGN OF A 4-TERMINAL SILICON PRESSURE SENSOR AT THE CENTER OF A DIAPHRAGM [J].

BAO, MH ;

WANG, Y .

SENSORS AND ACTUATORS, 1987, 12 (01) :49-56

[10]

Pawlik P, 1980, ELASTICITY THEORY AP

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