CIRCUIT APPROACHES TO INCREASING IGBT SWITCHING SPEED

被引：2
|
作者：
BOISVERT, DM
LIU, DKY
PLUMMER, JD
机构：
[1] Stanford Univ, Stanford, CA, USA
来源：
IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1988年 / 23卷 / 05期
关键词：
D O I：
10.1109/4.5958
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
TRANSISTORS, BIPOLAR
引用
收藏
页码：1276 / 1279
页数：4
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