FORMATION OF METASTABLE SUPERSATURATED SOLID-SOLUTIONS IN ION-IMPLANTED SILICON DURING SOLID-PHASE CRYSTALLIZATION

被引：49

作者：

NARAYAN, J

HOLLAND, OW

机构：

来源：

APPLIED PHYSICS LETTERS | 1982年 / 41卷 / 03期

关键词：

D O I：

10.1063/1.93480

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：239 / 242

页数：4

共 10 条

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[3]

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[8] CONFIGURATIONAL ENTROPY OF AMORPHOUS SI AND GE [J].

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[10]

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