Growth of O- and Zn-polar ZnO films by DC magnetron sputtering

被引：0

作者：

Yoo, Jinyeop ^{[1
]}

Choi, Sungkuk ^{[1
]}

Jung, Soohoon ^{[1
]}

Cho, Youngji ^{[1
]}

Lee, Sangtae ^{[2
]}

Kil, Gyungsuk ^{[3
]}

Lee, Hyunjae ^{[4
]}

Yao, Takafumi ^{[5
]}

Chang, Jiho ^{[1
]}

机构：

[1] Natl Korea Maritime Univ, Dept Nanosemicond Engn, Busan 606791, South Korea

[2] Natl Korea Maritime Univ, Dept Offshore Plant Management, Busan 606791, South Korea

[3] Natl Korea Maritime Univ, Div Elect & Elect Engn, Busan 606791, South Korea

[4] PAN Xal Co Ltd, Suwon 443380, South Korea

[5] Tohoku Univ, Ctr Interdisciplinary Res, Sendai, Miyagi 9808577, Japan

来源：

JOURNAL OF THE KOREAN CRYSTAL GROWTH AND CRYSTAL TECHNOLOGY | 2012年 / 22卷 / 01期

基金：

新加坡国家研究基金会;

关键词：

ZnO; DC magnetron sputtering; Polarity;

D O I：

10.6111/JKCGCT.2012.22.1.001

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

O- and Zn-polar ZnO films were grown by DC magnetron sputtering. Growth of high-quality, single-crystal ZnO thin films were confirmed by XRD and pole figure analysis. O-polar ZnO was grown on an Al2O3 substrate, which was confirmed by a slow growth rate (378 nm/hr), a fast etching rate (59 nm/min), and by the hillocks on the surface after etching. Zn-polar ZnO was grown on a GaN/Al2O3 substrate, which was confirmed by a fast growth rate (550 nm/hr), a slow etching rate (28 nm/min), and by pits on the surface after etching. Results from the present study show that it is possible to use DC-sputtering to grow ZnO film with the same polarity as other epitaxial growth methods.

引用

页码：1 / 4

页数：4

共 14 条

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