RELIABILITY OF GALLIUM-ARSENIDE DEVICES

被引：0

作者：

MAURER, RH

CHAO, KD

BARGERON, CB

BENSON, RC

NHAN, E

机构：

来源：

JOHNS HOPKINS APL TECHNICAL DIGEST | 1992年 / 13卷 / 03期

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D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Reliability qualification tests for space, applications were carried out on several types of gallium arsenide transistors and process control monitors. A variability in the maturity and quality of the GaAs devices was determined. Failure analyses indicated that both subsurface defects and arsenic on device surfaces can lead to long-term burnout.

引用

页码：407 / 417

页数：11