AN 8-18-GHZ YIG-TUNED FET OSCILLATOR

被引：12

作者：

PAPP, JC ^{[1
]}

KOYANO, YY ^{[1
]}

机构：

[1] WATKINS JOHNSON CO,PALO ALTO,CA 94304

来源：

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES | 1980年 / 28卷 / 07期

关键词：

D O I：

10.1109/TMTT.1980.1130164

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：762 / 767

页数：6

共 14 条

[1]

BASAWAPATNA GR, 1979, IEEE T MICROW THEORY, V27, P379, DOI 10.1109/TMTT.1979.1129636

[2]

BODWAY GE, 1968, MICROWAVE J MAY

[3]

CARSON RS, 1975, HIGH FREQUENCY AMPLI, P193

[4] CW OSCILLATION CHARACTERISTICS OF GAAS SCHOTTKY-BARRIER GATE FIELD-EFFECT TRANSISTORS [J].

MAEDA, M ;

TAKAHASHI, S ;

KODERA, H .

PROCEEDINGS OF THE IEEE, 1975, 63 (02) :320-321

[5] DESIGN AND PERFORMANCE OF X-BAND OSCILLATORS WITH GAAS SCHOTTKY-GATE FIELD-EFFECT TRANSISTORS [J].

MAEDA, M ;

KIMURA, K ;

KODERA, H .

IEEE TRANSACTIONS ON MICROWAVE THEORY AND TECHNIQUES, 1975, 23 (08) :661-667

[6] COMMON-GATE GAAS FET OSCILLATOR [J].

OMORI, M ;

NISHIMOTO, C .

ELECTRONICS LETTERS, 1975, 11 (16) :369-371

[7]

OYAFUSO RT, 1979, IEEE INT MICR S, P183

[8] EXPERIMENTS ON INTEGRATED GALLIUM-ARSENIDE FET OSCILLATORS AT X BAND [J].

PUCEL, RA ;

BERA, R ;

MASSE, D .

ELECTRONICS LETTERS, 1975, 11 (10) :219-220

[9]

RUTTAN T, 1977, IEEE MTT S INT MICRO, P264

[10] ALUMINA MICROSTRIP GAAS FET 11 GHZ OSCILLATOR [J].

SLAYMAKER, NA ;

TURNER, JA .

ELECTRONICS LETTERS, 1975, 11 (14) :300-301

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