HOMOEPITAXIAL FILMS GROWN ON SI(100) AT 150-DEGREES C BY REMOTE PLASMA-ENHANCED CHEMICAL VAPOR-DEPOSITION

被引：61

作者：

BREAUX, L

ANTHONY, B

HSU, T

BANERJEE, S

TASCH, A

机构：

来源：

APPLIED PHYSICS LETTERS | 1989年 / 55卷 / 18期

关键词：

D O I：

10.1063/1.102161

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：1885 / 1887

页数：3

共 14 条

[1]

[Anonymous], SEMICONDUCTOR INT

[2] INSITU CLEANING OF SILICON SUBSTRATE SURFACES BY REMOTE PLASMA-EXCITED HYDROGEN [J].

ANTHONY, B ;

BREAUX, L ;

HSU, T ;

BANERJEE, S ;

TASCH, A .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 1989, 7 (04) :621-626

[3] METHODS FOR DEFECT EVALUATION OF THIN (100) ORIENTED SILICON EPITAXIAL LAYERS USING A WET CHEMICAL ETCH [J].

ARCHER, VD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1982, 129 (09) :2074-2076

[4]

BREAUX L, 1989, IN PRESS 1989 P IND

[5] SILICON EPITAXY AT 650-800-DEGREES-C USING LOW-PRESSURE CHEMICAL VAPOR-DEPOSITION BOTH WITH AND WITHOUT PLASMA ENHANCEMENT [J].

DONAHUE, TJ ;

REIF, R .

JOURNAL OF APPLIED PHYSICS, 1985, 57 (08) :2757-2765

[6]

HSU T, IN PRESS J ELECTRON

[7]

HSU T, 1989, J ELECTRON MATE 0718

[8] HYDROGEN PLASMA INDUCED DEFECTS IN SILICON [J].

JENG, SJ ;

OEHRLEIN, GS ;

SCILLA, GJ .

APPLIED PHYSICS LETTERS, 1988, 53 (18) :1735-1737

[9] LOW-TEMPERATURE CLEANING OF SI AND GROWTH OF GAAS ON SI BY HYDROGEN PLASMA-ASSISTED METALORGANIC MOLECULAR-BEAM EPITAXY [J].

KUNITSUGU, Y ;

SUEMUNE, I ;

TANAKA, Y ;

KAN, Y ;

YAMANISHI, M .

JOURNAL OF CRYSTAL GROWTH, 1989, 95 (1-4) :91-95

[10] LOW-TEMPERATURE SILICON EPITAXY BY ULTRAHIGH-VACUUM CHEMICAL VAPOR-DEPOSITION [J].

MEYERSON, BS .

APPLIED PHYSICS LETTERS, 1986, 48 (12) :797-799

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