GAAS MIS STRUCTURES WITH SIO2 USING A THIN SILICON INTERLAYER

被引：72

作者：

FOUNTAIN, GG

HATTANGADY, SV

VITKAVAGE, DJ

RUDDER, RA

MARKUNAS, RJ

机构：

[1] Research Triangle Inst, Research, Triangle Park, NC, USA, Research Triangle Inst, Research Triangle Park, NC, USA

来源：

ELECTRONICS LETTERS | 1988年 / 24卷 / 18期

关键词：

D O I：

10.1049/el:19880771

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

SEMICONDUCTOR DEVICES, MIS

引用

页码：1134 / 1135

页数：2

共 11 条

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[5]

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