A COMPARISON BETWEEN SB AND AS IMPLANTATION FOR THE FORMATION OF HIGHLY CONDUCTING SHALLOW SILICON LAYERS

被引：1
作者：
YOUNG, ND
机构：
来源：
JOURNAL OF APPLIED PHYSICS | 1987年 / 62卷 / 08期
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D O I：
10.1063/1.339310
中图分类号：
O59 [应用物理学];
学科分类号：
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页码：3441 / 3443
页数：3
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