THE GROWTH OF CDXHG1-XTE USING ORGANOMETALLICS

被引:52
作者
MULLIN, JB
IRVINE, SJC
机构
来源
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1982年 / 21卷 / 01期
关键词
D O I
10.1116/1.571707
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:178 / 181
页数:4
相关论文
共 10 条
[1]   THE GROWTH BY MOVPE AND CHARACTERIZATION OF CDXHG1-XTE [J].
IRVINE, SJC ;
MULLIN, JB .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :107-115
[2]   A STUDY OF THE GROWTH OF HGTE FROM THE VAPOR [J].
IRVINE, SJC ;
MULLIN, JB .
JOURNAL OF CRYSTAL GROWTH, 1981, 53 (03) :458-468
[3]   LOW-TEMPERATURE CVD GROWTH OF EPITAXIAL HGTE ON CDTE [J].
KUECH, TF ;
MCCALDIN, JO .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1981, 128 (05) :1142-1144
[4]   GROWTH OF CADMIUM TELLURIDE BY SOLVENT EVAPORATION [J].
LUNN, B ;
BETTRIDGE, V .
REVUE DE PHYSIQUE APPLIQUEE, 1977, 12 (02) :151-154
[5]   USE OF METAL-ORGANICS IN PREPARATION OF SEMICONDUCTOR MATERIALS .2. II-VI COMPOUNDS [J].
MANASEVIT, HM ;
SIMPSON, WI .
JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :644-+
[6]  
MULLIN J, UNPUB
[7]  
Mullin J. B., 1973, Journal of Luminescence, V7, P176, DOI 10.1016/0022-2313(73)90066-5
[8]   VAPOR-PHASE EPITAXY OF CDXHG1-XTE USING ORGANOMETALLICS [J].
MULLIN, JB ;
IRVINE, SJC .
JOURNAL OF PHYSICS D-APPLIED PHYSICS, 1981, 14 (09) :L149-L151
[9]   ORGANOMETALLIC GROWTH OF II-VI-COMPOUNDS [J].
MULLIN, JB ;
IRVINE, SJC ;
ASHEN, DJ .
JOURNAL OF CRYSTAL GROWTH, 1981, 55 (01) :92-106
[10]   VAPOR-PHASE GROWTH OF HG1-XCDXTE EPITAXIAL LAYERS [J].
VOHL, P ;
WOLFE, CM .
JOURNAL OF ELECTRONIC MATERIALS, 1978, 7 (05) :659-678