COMPARISON OF MEMORY SWITCHING OPERATION IN A NUMBER OF AMORPHOUS-CHALCOGENIDE SYSTEMS

被引：12

作者：

DARGAN, CL

BURTON, P

PHILLIPS, SV

BLOOR, AS

NESVADBA, P

机构：

[1] GEC LTD,HIRST RES CTR,CENT RES LABS,WEMBLY,ENGLAND

[2] GEC POWER ENGN LTD,MAT LAB,STAFFORD,ENGLAND

来源：

关键词：

D O I：

10.1007/BF00540757

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：1595 / 1601

页数：7

共 5 条

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[2] PRESWITCHING ELECTRICAL PROPERTIES, FORMING, AND SWITCHING IN AMORPHOUS CHALCOGENIDE ALLOY THRESHOLD AND MEMORY DEVICES
BOSNELL, JR
THOMAS, CB
[J]. SOLID-STATE ELECTRONICS, 1972, 15 (11) : 1261 - &
[3] THERMAL BREAKDOWN AND SWITCHING IN CHALCOGENIDE GLASSES
BURTON, P
BRANDER, RW
[J]. INTERNATIONAL JOURNAL OF ELECTRONICS, 1969, 27 (06) : 517 - &
[4] NEALE RG, 1970, S ELECTROTECHNICAL G, P1
[5] OVSHINSKY SR, 1973, IEEE T ELECTRON DEVI, VED20, P91