CHARACTERISTICS OF 3-MU-M-THICK SILICON SOLAR-CELLS USING BONDED SILICON-ON-INSULATOR WAFER

被引：4
|
作者：
TAKATO, H
YUI, N
HAYASHI, Y
SEKIGAWA, T
机构：
[1] Electrotechnical Laboratory, Tsukuba, Ibaraki, 305
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 10A期
关键词：
THIN SOLAR CELL; SOI WAFER; SURFACE POTENTIAL; SURFACE PASSIVATION OPEN-CIRCUIT VOLTAGE; SHORT-CIRCUIT CURRENT;
D O I：
10.1143/JJAP.33.L1396
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Three-mum-thick single-crystalline silicon solar cells were fabricated using a bonded silicon-on-insulator (SOI) wafer. The passivation effect due to the surface potential at the SOI layer/SiO2 back interface was investigated. The surface potential was changed by externally applied voltages. When the SOI layer/SiO2 back interface was in the accumulated condition, short-circuit current (I(sc)) and open-circuit voltage (V(oc)) were improved. Control of the surface potential is, therefore, effective in realizing high-efficiency thin silicon solar cells.
引用
收藏
页码：L1396 / L1398
页数：3
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