MOLECULAR-BEAM EPITAXY OF CDTE AND CDXHG1-XTE

被引：24

作者：

FAURIE, JP ^{[1
]}

MILLION, A ^{[1
]}

JACQUIER, G ^{[1
]}

机构：

[1] CEN,ELECTR & TECHNOL INFORMAT LAB,F-38041 GRENOBLE,FRANCE

来源：

THIN SOLID FILMS | 1982年 / 90卷 / 01期

关键词：

D O I：

10.1016/0040-6090(82)90082-7

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：107 / 112

页数：6

共 9 条

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[3] MOLECULAR-BEAM EPITAXY OF II-VI COMPOUNDS - CDXHG1-XTE [J].

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MILLION, A .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) :582-585

[4] MOLECULAR-BEAM EPITAXY OF II-VI COMPOUNDS - CDTE [J].

FAURIE, JP ;

MILLION, A .

JOURNAL OF CRYSTAL GROWTH, 1981, 54 (03) :577-581

[5]

FAURIE JP, 1981, MAR P EUR WORKSH MOL

[6] CDTE-CDXHG1-XTE HETEROSTRUCTURES [J].

KONNIKOV, SG ;

OGORODNIKOV, VK ;

SYDORCHUK, PG .

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1975, 27 (01) :43-48

[7]

KRIKORIAN E, 1980, SPIE, V244, P13

[8]

ORTON JW, 1980, REP PROG PHYS, V43, P1267

[9] CRYSTALLOGRAPHIC PROPERTIES OF AS GROWN CDXHG1-XTE EPITAXIAL LAYERS DEPOSITED BY CATHODIC SPUTTERING [J].

ROUSSILLE, R .

JOURNAL OF CRYSTAL GROWTH, 1982, 56 (01) :101-107

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