ESTIMATION OF THE MOBILITY-LIFETIME PRODUCTS IN AMORPHOUS-SILICON IN THE PRESENCE OF DISPERSIVE TRANSPORT

被引:1
作者
ZHOU, JH
机构
[1] Department of Electrical and Computer Engineering, Kanazawa University
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS & EXPRESS LETTERS | 1994年 / 33卷 / 12A期
关键词
AMORPHOUS SILICON; MOBILITY; DRIFT MOBILITY; CARRIER TRAPPING; RECOMBINATION; MOBILITY-LIFETIME PRODUCT; TIME OF FLIGHT; PHOTOCONDUCTIVITY;
D O I
10.1143/JJAP.33.L1655
中图分类号
O59 [应用物理学];
学科分类号
摘要
Applying the intuitive multiple trapping theory, we have calculated the time-of-flight (TOF) charge-collection mu tau product, (mu tau)(cc), under the condition of dispersive transport and find that (mu tau)(cc) = (1/alpha-alpha)mu(0) tau(fd)approximate to mu(0) tau(fd), where alpha is a temperature-dependent constant, mu(0) is the free-carrier mobility, and tau(fd) is the tau(fd) charge-collection free-carrier deep-trapping time. The steady-state photoconductivity mu tau product, (mu tau)(ss), is argued to be (mu tau)(ss) = mu(0) tau(fr) where tau(fr) is the steady-state free-carrier recombination lifetime. As a result, (mu tau)(ss)/(mu tau)(cc) approximate to tau(fr)/tau(fd). Our calculation shows that the presence of dispersive transport does not affect the ratio of (mu tau)(ss) and (mu tau)(cc), and that the difference between (mu tau)(ss) and (mu tau)(cc) is due almost entirely to a difference between the free-carrier recombination lifetime in the steady state and the free-carrier deep-trapping time in the TOF charge-collection experiment. The origin of the difference between (mu tau)(ss) and (mu tau)(cc) is discussed.
引用
收藏
页码:L1655 / L1658
页数:4
相关论文
共 14 条
[1]   TRANSIENT PHOTOCHARGE MEASUREMENTS AND ELECTRON-EMISSION FROM DEEP LEVELS IN UNDOPED A-SI-H [J].
ANTONIADIS, H ;
SCHIFF, EA .
PHYSICAL REVIEW B, 1992, 46 (15) :9482-9492
[2]   SOLUTION OF THE MU-TAU PROBLEM IN A-SI-H [J].
KOCKA, J ;
NEBEL, CE ;
ABEL, CD .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1991, 63 (01) :221-246
[3]   TRANSIENT AND STEADY-STATE PHOTOCONDUCTIVITY IN A-SI1-XGEX-H,F ALLOYS [J].
MACKENZIE, KD ;
PAUL, W .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1987, 97-8 :1055-1058
[4]   EXCESS CARRIER DISPERSION IN CONVENTIONALLY DISPERSIVE AMORPHOUS-SEMICONDUCTORS AND THE MOBILITY-LIFETIME ANOMALY IN A-SI-H [J].
MAIN, C ;
BERKIN, J ;
BRUGGEMANN, R ;
MARSHALL, JM .
JOURNAL OF NON-CRYSTALLINE SOLIDS, 1991, 137 :439-442
[5]   TRANSIENT PHOTOCONDUCTIVITY AND PHOTOINDUCED OPTICAL-ABSORPTION IN AMORPHOUS-SEMICONDUCTORS [J].
ORENSTEIN, J ;
KASTNER, MA ;
VANINOV, V .
PHILOSOPHICAL MAGAZINE B-PHYSICS OF CONDENSED MATTER STATISTICAL MECHANICS ELECTRONIC OPTICAL AND MAGNETIC PROPERTIES, 1982, 46 (01) :23-62
[6]   MOBILITY LIFETIME ESTIMATES IN AMORPHOUS HYDROGENATED SILICON (A-SI-H) [J].
SCHIFF, EA .
PHILOSOPHICAL MAGAZINE LETTERS, 1987, 55 (02) :87-92
[8]   TRAPPING PARAMETERS OF DANGLING BONDS IN HYDROGENATED AMORPHOUS-SILICON [J].
STREET, RA .
APPLIED PHYSICS LETTERS, 1982, 41 (11) :1060-1062
[9]  
TIEDJE T, 1984, SEMICONDUCT SEMIMET, V21, P207
[10]  
TIEDJE T, 1984, TOP APPL PHYS, V56, P261