4 PARAMETERS MODEL THAT FITS DEGRADATION CURVE DELTAVG(VG) OF MOS-TRANSISTORS UNDER IRRADIATION

被引：8

作者：

BUXO, J

ESTEVE, D

ENEA, G

MARTINEZ, A

机构：

来源：

SOLID-STATE ELECTRONICS | 1972年 / 15卷 / 09期

关键词：

D O I：

10.1016/0038-1101(72)90147-5

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

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页码：1029 / &

相关论文

共 3 条

[1] EFFECTS OF IONIZING RADIATION ON MOS DEVICES [J].

ANDRE, B ;

BUXO, J ;

ESTEVE, D ;

MARTINOT, H .

SOLID-STATE ELECTRONICS, 1969, 12 (02) :123-+

[2] BEHAVIOUR OF CURRENTS GOING THROUGH MOS STRUCTURES UNDER IONIZING RADIATIONS [J].

ESTEVE, D ;

BUXO, J .

SOLID-STATE ELECTRONICS, 1971, 14 (03) :257-&

[3] DEGRADATION MECHANISM OF MOS STRUCTURES AND TRANSISTORS UNDER IONISING RADIATION [J].

ESTEVE, D ;

BUXO, J .

ELECTRONICS LETTERS, 1970, 6 (07) :198-&