HIGH-ENERGY IMPLANTATION OF BURIED INSULATING LAYERS

[1] DIELECTRIC ISOLATION TECHNIQUES FOR INTEGRATED-CIRCUITS [J]. MICROELECTRONICS RELIABILITY, 1976, 15 (02) : 113 - 122

[2] FREEMAN JH, 1978, EUROPEAN C ION IMPLA, P74

[3] GIBBONS JF, 1975, PROJECTED RANGE STAT

[4] HIGH-DENSITY STATIC ESFI MOS MEMORY CELLS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 234 - 238

[5] KOOI E, 1971, PHILIPS RES REP, V26, P166

[6] VMOS - HIGH-SPEED TTL COMPATIBLE MOS LOGIC [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 239 - 250

[7] SCHWUTTKE GH, 1970, AFCRL700459 SCI REP

[8] SMITH B, 1977, ION IMPLANTATION RAN

[9] MOS AND VERTICAL JUNCTION DEVICE CHARACTERISTICS OF EPITAXIAL SILICON ON LOW ALUMINUM-RICH SPINEL [J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 943 - +

[1] DIELECTRIC ISOLATION TECHNIQUES FOR INTEGRATED-CIRCUITS [J]. MICROELECTRONICS RELIABILITY, 1976, 15 (02) : 113 - 122

[2] FREEMAN JH, 1978, EUROPEAN C ION IMPLA, P74

[3] GIBBONS JF, 1975, PROJECTED RANGE STAT

[4] HIGH-DENSITY STATIC ESFI MOS MEMORY CELLS [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 234 - 238

[5] KOOI E, 1971, PHILIPS RES REP, V26, P166

[6] VMOS - HIGH-SPEED TTL COMPATIBLE MOS LOGIC [J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 239 - 250

[7] SCHWUTTKE GH, 1970, AFCRL700459 SCI REP

[8] SMITH B, 1977, ION IMPLANTATION RAN

[9] MOS AND VERTICAL JUNCTION DEVICE CHARACTERISTICS OF EPITAXIAL SILICON ON LOW ALUMINUM-RICH SPINEL [J]. SOLID-STATE ELECTRONICS, 1970, 13 (07) : 943 - +