EFFECT OF ANNEALING AND SULFUR PASSIVATION OF GAAS SURFACE IN ZNSE/GAAS HETEROSTRUCTURE

被引：8

作者：

MURAWALA, PA ^{[1
]}

TSUJI, O ^{[1
]}

FUJITA, S ^{[1
]}

机构：

[1] SAMCO INT INC,DIV RES & DEV,TAKEDA,KYOTO 612,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期

关键词：

ANNEALING; INTERDIFFUSION; SULFUR PASSIVATION; ZNSE/GAAS HETEROSTRUCTURE;

D O I：

10.1143/JJAP.30.3777

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We report the effect of annealing and sulfur (S) passivation of GaAs surface on the interface characteristics and interdiffusion problem in ZnSe/GaAs heterostructures whose ZnSe layers are grown by atomic layer epitaxy (ALE) and metalorganic molecular beam epitaxy (MOMBE). The photoluminescence (PL) intensity of self-activated centers created due to interdiffusion at 500-degrees-C in the conventionally grown sample is 3-14 times higher than that in the S-passivated sample. Secondary ion mass spectroscopy (SIMS) data suggest that after annealing, Ga and As concentration in the ZnSe epilayer is lower in S-passivated materials. These features suggest that heterostructures are thermally stable in S-passivated material. As a result of S-passivation, full width at half maximum (FWHM) values of X-ray rocking curves are greatly reduced and we could, without postgrowth annealing, achieve well-defined C-V characteristics of a metal/pseudoinsulating ZnSe/GaAs metal-insulator-semiconductor (MIS) diode. Sulfur passivation is an important tool for the fabrication of high-quality heterostructures of II-VI and III-V semiconductors.

引用

页码：3777 / 3781

页数：5

共 50 条

[41] Annealing effects on faceting of InAs/GaAs(001) quantum dots [J].

Placidi, E. ;

Della Pia, A. ;

Arciprete, F. .

APPLIED PHYSICS LETTERS, 2009, 94 (02)

[42] Thermal annealing of InAs quantum dots on patterned GaAs substrates [J].

Helfrich, M. ;

Hendrickson, J. ;

Ruelke, D. ;

Kalt, H. ;

Hetterich, M. ;

Khitrova, G. ;

Gibbs, H. ;

Linden, S. ;

Wegener, M. ;

Hu, D. Z. ;

Schaadt, D. M. .

PHYSICS OF SEMICONDUCTORS: 30TH INTERNATIONAL CONFERENCE ON THE PHYSICS OF SEMICONDUCTORS, 2011, 1399

[43] DYNAMIC ANNEALING OF DAMAGE IN AR+-IMPLANTED GAAS CRYSTALS [J].

KUTAS, AA ;

KOVYAZINA, TV ;

AKIMOV, AN ;

GUSAKOV, GA ;

KOMAROV, FF ;

NOVIKOV, AP ;

VLASUKOVA, LA .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1995, 34 (01) :32-35

[44] Surface preparation and effective contact formation for GaAs surface [J].

Kang, MG ;

Park, HH .

VACUUM, 2002, 67 (01) :91-100

[45] Effect of Annealing on the Structure of Composite Passivation Films Prepared by Magnetron Sputtering Deposition on the Surface of HgCdTe [J].

Lin, Yang ;

Qin, Qiang ;

Wang, Xiangqian ;

Chen, Jiyuan ;

Li, Lu ;

Jiang, Jun ;

He, Yuanhuai ;

Wang, Xiao ;

Zhao, Peng ;

Yuan, Shouzhang .

CRYSTALS, 2022, 12 (07)

[46] Sulfidization of GaAs in alcoholic solutions: A method having an impact on efficiency and stability of passivation [J].

Bessolov, VN ;

Konenkova, EV ;

Lebedev, MV .

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY, 1997, 44 (1-3) :376-379

[47] High efficiency AlxGa1-xAs/GaAs solar cells: Fabrication, irradiation and annealing effect [J].

Li, B ;

Xiang, XB ;

You, ZP ;

Xu, Y ;

Fei, XY ;

Liao, XB .

SOLAR ENERGY MATERIALS AND SOLAR CELLS, 1996, 44 (01) :63-67

[48] Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE [J].

Brunner, F ;

Richter, E ;

Bergunde, T ;

Rechenberg, I ;

Bhattacharya, A ;

Maassdorf, A ;

Tomm, JW ;

Kurpas, P ;

Achouche, M ;

Würfl, J ;

Weyers, M .

JOURNAL OF ELECTRONIC MATERIALS, 2000, 29 (02) :205-209

[49] Effect of high-temperature annealing on GaInP/GaAs HBT structures grown by LP-MOVPE [J].

F. Brunner ;

E. Richter ;

T. Bergunde ;

I. Rechenberg ;

A. Bhattacharya ;

A. Maassdorf ;

J. W. Tomm ;

P. Kurpas ;

M. Achouche ;

J. Würfl ;

M. Weyers .

Journal of Electronic Materials, 2000, 29 :205-209

[50] Thermal annealing of GaInNAs/GaAs quantum wells grown by chemical beam epitaxy and its effect on photoluminescence [J].

Kageyama, T ;

Miyamoto, T ;

Makino, S ;

Koyama, F ;

Iga, K .

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS, 1999, 38 (3B) :L298-L300

← 1 2 3 4 5 →