EFFECT OF ANNEALING AND SULFUR PASSIVATION OF GAAS SURFACE IN ZNSE/GAAS HETEROSTRUCTURE

被引：8
作者：
MURAWALA, PA [1 ]
TSUJI, O [1 ]
FUJITA, S [1 ]
FUJITA, S [1 ]
机构：
[1] SAMCO INT INC,DIV RES & DEV,TAKEDA,KYOTO 612,JAPAN
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1991年 / 30卷 / 12B期
关键词：
ANNEALING; INTERDIFFUSION; SULFUR PASSIVATION; ZNSE/GAAS HETEROSTRUCTURE;
D O I：
10.1143/JJAP.30.3777
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
We report the effect of annealing and sulfur (S) passivation of GaAs surface on the interface characteristics and interdiffusion problem in ZnSe/GaAs heterostructures whose ZnSe layers are grown by atomic layer epitaxy (ALE) and metalorganic molecular beam epitaxy (MOMBE). The photoluminescence (PL) intensity of self-activated centers created due to interdiffusion at 500-degrees-C in the conventionally grown sample is 3-14 times higher than that in the S-passivated sample. Secondary ion mass spectroscopy (SIMS) data suggest that after annealing, Ga and As concentration in the ZnSe epilayer is lower in S-passivated materials. These features suggest that heterostructures are thermally stable in S-passivated material. As a result of S-passivation, full width at half maximum (FWHM) values of X-ray rocking curves are greatly reduced and we could, without postgrowth annealing, achieve well-defined C-V characteristics of a metal/pseudoinsulating ZnSe/GaAs metal-insulator-semiconductor (MIS) diode. Sulfur passivation is an important tool for the fabrication of high-quality heterostructures of II-VI and III-V semiconductors.
引用
收藏
页码：3777 / 3781
页数：5
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