FILMS FROM THE LOW-TEMPERATURE OXIDATION OF SILANE

被引：49

作者：

TAFT, EA

机构：

[1] General Electric Corporate Research and Development Center, Schenectady

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1979年 / 126卷 / 10期

关键词：

CVD; dielectric; infrared; polymerization;

D O I：

10.1149/1.2128786

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Oxygen-silane concentrations in nitrogen for the deposition of films on substrates hald at 130°-320°C have been determined for a standard horizontal reactor. The over-all growth rate curve is consistent with a branching chain reaction at these temperatures. The infrared absorption spectra show increasing hydrogen content of the films as the reaction temperature is reduced. © 1979, The Electrochemical Society, Inc. All rights reserved.

引用

页码：1728 / 1731

页数：4

共 10 条

[1] COMPOSITION, CHEMICAL BONDING, AND CONTAMINATION OF LOW-TEMPERATURE SIOXNY INSULATING FILMS [J].

ANDERSON, GW ;

SCHMIDT, WA ;

COMAS, J .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1978, 125 (03) :424-430

[2] GROWTH OF SILICA AND PHOSPHOSILICATE FILMS [J].

BALIGA, BJ ;

GHANDHI, SK .

JOURNAL OF APPLIED PHYSICS, 1973, 44 (03) :990-994

[3] The oxidation of the silicon hydrides. Part II [J].

Emeleus, HJ ;

Stewart, K .

JOURNAL OF THE CHEMICAL SOCIETY, 1936, :677-684

[4] The oxidation of the silicon hydrides. Part I. [J].

Emeleus, HJ ;

Stewart, K .

JOURNAL OF THE CHEMICAL SOCIETY, 1935, :1182-1189

[5]

GOLDSMITH N, 1967, RCA REV, V28, P153

[6]

Graham J., 1974, High Temperatures - High Pressures, V6, P577

[7] ADVANCES IN DEPOSITION PROCESSES FOR PASSIVATION FILMS [J].

KERN, W ;

ROSLER, RS .

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY, 1977, 14 (05) :1082-1099

[8] STRUCTURAL EVALUATION OF SILICON OXIDE FILMS [J].

PLISKIN, WA ;

LEHMAN, HS .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1965, 112 (10) :1013-&

[9] The infrared absorption spectrum of silane [J].

Steward, WB ;

Nielsen, HH .

PHYSICAL REVIEW, 1935, 47 (11) :0828-0832

[10]

STRATER K, 1968, RCA REV, V29, P618

← 1 →