TEMPERATURE-DEPENDENCE ANALYSIS OF THE OPTICAL-TRANSMISSION SPECTRA IN INGAAS/INP MULTIQUANTUM WELL STRUCTURES

被引：5
作者：
ARENA, C [1 ]
TARRICONE, L [1 ]
GENOVA, F [1 ]
MORELLO, G [1 ]
机构：
[1] CSELT SPA,I-10184 TURIN,ITALY
来源：
APPLIED SURFACE SCIENCE | 1993年 / 63卷 / 1-4期
关键词：
D O I：
10.1016/0169-4332(93)90090-X
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Transmission measurements on InGaAs/InP multi quantum wells (MQW) prepared by chemical beam epitaxy (CBE) have been performed in a wide temperature range (10-300 K) and the absorption coefficient has been deduced. The exciton resonance related to the n = 1 heavy hole to electron state transition has been clearly observed up to room temperature. The lineshape has been carefully analyzed by fitting the peak with Gaussian functions. The energy location of the excitonic peak changes as a function of temperature as does the InGaAs gap. Such energy values, which are related to the confining energy of electrons and holes in the well, have been compared with a theoretical calculation. The thermal broadening of the absorption is shown and discussed by taking into account the interaction with LO phonons in InGaAs. Finally the temperature dependence of the integrated area of the peak is presented.
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页码：202 / 207
页数：6
相关论文
共 8 条
[1]   ROOM-TEMPERATURE EXCITONIC NONLINEAR-OPTICAL EFFECTS IN SEMICONDUCTOR QUANTUM-WELL STRUCTURES [J].
CHEMLA, DS ;
MILLER, DAB .
JOURNAL OF THE OPTICAL SOCIETY OF AMERICA B-OPTICAL PHYSICS, 1985, 2 (07) :1155-1173
[2]   TEMPERATURE-DEPENDENCE OF OPTICAL-ABSORPTION INDUCED BY EXCITON RESONANCES IN GAAS GAALAS MULTI-QUANTUM-WELL STRUCTURES [J].
FILIPOWICZ, J ;
GHEZZI, C ;
TARRICONE, L .
SOLID STATE COMMUNICATIONS, 1990, 74 (06) :533-538
[3]  
FOX AM, 1991, IEEE J QUANTUM ELECT, V27, P10
[4]   INFLUENCE OF GROWTH-PARAMETERS ON THE INTERFACE ABRUPTNESS IN CBE-GROWN INGAAS/INP QWS AND SLS [J].
GENOVA, F ;
ANTOLINI, A ;
FRANCESIO, L ;
GASTALDI, L ;
LAMBERTI, C ;
PAPUZZA, C ;
RIGO, C .
JOURNAL OF CRYSTAL GROWTH, 1992, 120 (1-4) :333-337
[5]   PHOTOREFLECTANCE STUDY OF NARROW-WELL STRAINED-LAYER INXGA1-XAS/GAAS COUPLED MULTIPLE-QUANTUM-WELL STRUCTURES [J].
PAN, SH ;
SHEN, H ;
HANG, Z ;
POLLAK, FH ;
ZHUANG, WH ;
XU, Q ;
ROTH, AP ;
MASUT, RA ;
LACELLE, C ;
MORRIS, D .
PHYSICAL REVIEW B, 1988, 38 (05) :3375-3382
[6]   OBSERVATION OF EXCITONIC STATES AT ROOM-TEMPERATURE IN INGAAS/INP MULTI-QUANTUM-WELLS (POTENTIAL APPLICATIONS) [J].
POCHOLLE, JP ;
RAZEGHI, M ;
RAFFY, J ;
PAPUCHON, M ;
WEISBUCH, C ;
PUECH, C ;
VANDENBORRE, A ;
BEZY, JL ;
HEINRICH, L ;
VIMONT, JE .
REVUE DE PHYSIQUE APPLIQUEE, 1987, 22 (10) :1239-1251
[7]   INGAAS-INP MULTIPLE QUANTUM-WELLS GROWN BY ATMOSPHERIC-PRESSURE METALORGANIC CHEMICAL VAPOR-DEPOSITION [J].
SKOLNICK, MS ;
TAYLOR, LL ;
BASS, SJ ;
PITT, AD ;
MOWBRAY, DJ ;
CULLIS, AG ;
CHEW, NG .
APPLIED PHYSICS LETTERS, 1987, 51 (01) :24-26
[8]   GA0.47IN0.53AS/INP SUPERLATTICES GROWN BY CHEMICAL BEAM EPITAXY - ABSORPTION, PHOTOLUMINESCENCE EXCITATION, AND PHOTOCURRENT SPECTROSCOPIES [J].
TSANG, WT ;
SCHUBERT, EF ;
CHU, SNG ;
TAI, K ;
SAUER, R .
APPLIED PHYSICS LETTERS, 1987, 50 (09) :540-542
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